传统的底层填充和球顶材料与酸酐环氧树脂的Tg约为100-150°C，在250°C回流焊接时，可能会产生过高的界面拉伸应力。新一代的AIT底层填充材料和球顶化合物具有不同的化学成分，可以在240℃的超高Tg下实现新的性能。°AI科技的封装产品采用了高热传导率和低热界面电阻，可为倒装芯片封装的顶部和底部的热量传递提供动力。请点击这里查看视频，了解AI科技的底层填充和球顶封装产品如何助力倒装芯片和板载芯片实现更高性能的详细信息。
AI Technology的底层填充物的独特之处在于其无与伦比的应力管理能力，同时提供了出色的防潮性能。 这些能力是通过非常规的聚合物工程和设计实现的。 AI Technology先进的微电子保护产品是在高温下工作的大型高性能器件的理想选择。
High Tg of 175-240C of the new generation of AIT thermally conductive underfill compounds coupling with molecular level stress absorption capability enables many high-performance flip-chip packaging including power devices.
传统的酸酐固化环氧树脂在进行250C的回流焊时，对新型无铅焊接的应力吸收能力有一定的限制。
- 除了传统的150℃的高温应用外，还可在150-300℃以上的高温下使用。
- 经过验证的不耐湿性和低吸湿性使其在JEDEC元件可靠性方面达到了1级。
- 符合RoHS、REACH和WEEE标准，达到UL94V-0等级。
同样具有应力吸收能力的高Tg倒装片下填充料也可用于印刷电路板上的球栅阵列封装的应力管理。
新一代超高Tg内填充物
具有超过240°C的玻璃转换温度，可实现极致的倒装芯片和元件应力管理
Besides the underfills for stress relief of BGA packages for solder-reflow interconnections, with more semiconductor design and packaging utilizing fan-in and fan-out wafer level packaging (FO-WLP), underfill that can manage large area chip with copper pillar and gold bumps down to less than 35μm and advancing toward 25μm required different underfilling technology and solution.
AI Technology, Inc. (AIT) have been utilizing its proprietary modified cyanate ester technology to provide both extra-high glass transition (Tg) and low viscosity for fast chip underfill successfully in the last few years. UF-MC7883-FP is a new generation of capillary underfill solution that have been proven to provide stress relief for chips with less than 35μm gap. With close to 80% fill with engineered micron sized silica, coefficient of thermal expansion (CTE) has been controlled to less 16 ppm/°C. The demonstrable low CTE and high Tg enable UF-MC7883-FP to provide slight compressive stress and low shear stress for WLP and package-on-package (PoP) and chiplets devices.
Wafer level and chiplets packaging required capillary underfill having much lower CTE and capillary gap-filling than those used in BGA board level packaging. UF-MC7883-FP introduced by AIT has been proven to meet the reliability performance of low CTE and stress absorption besides providing fast capillary filling productivity.
With AIT proprietary stress absorbing modified cyanate ester technology along with its controlled low CTE, even at high Tg of close to 220°C, the shear stress is controlled to minimal level to allow passing of the extreme thermal cycling requirements from -65°C to 150°C for the larger dies of 20mmx20mm. The inherent higher temperature stability of the cyanate ester molecular backbone, its has found some extreme applications at temperature beyond 175°C as well.
FOW的高熔体流动膜下填充。
- 在堆叠芯片应用中具有出色的熔融流动性和润湿性，可用于堆叠芯片应用中的过流线。
- 能够在100-150°C的低温度下固化，降低界面应力。
- 大面积堆叠芯片和模块的理想选择
- Preform with specific thickness accommodates the flip-chip or ball-grid-array parts with preformed cut-outs for interconnections allowing the film adhesive to flow and encapsulate for protection
Flow-Over-Wire线下填充膜胶可用于大规模晶圆级封装，采用DDAF格式。
填充液和薄膜粘合剂。
| 功能 | AI Technology部分# | 热能、电力及其他相关财产 |
| Underfill Film Adhesive for Wafer or Chip | UFF-ESP7770 |
|
| Underfill Film Adhesive for Wafer or Chip (REWORKABLE) | UFF-RW-ESP7760 |
|
| Underfill Film Adhesive for Wafer or Chip | UFF-CXP7880 |
|
| Underfill Film Adhesive for Wafer or Chip (REWORKABLE) | UFF-RW-CXP7860 |
|
The ultra-high glass transition temperature (Tg) at 240°C minimizes tensile stress induced failures when the flip-chip packages are going through the reflow soldering of lead-free solder.
欲了解更多信息和推荐帮助，请联系AI Technology销售和工程部。
AIT technical sales and service department can also be reached at: 1-609-799-9388 or fax: 609-799-9308